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参数资料
| 型号： | 2N5196 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 封装： | HERMETIC SEALED PACKAGE-6 |
| 文件页数： | 1/7页 |
| 文件大小： | 65K |
| 代理商： | 2N5196 |
2N5196/5197/5198/5199
Vishay Siliconix
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-1
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IG Max (pA)
jVGS1 – VGS2j Max (mV)
2N5196
–0.7 to –4
–50
1
–15
5
2N5197
–0.7 to –4
–50
1
–15
5
2N5198
–0.7 to –4
–50
1
–15
10
2N5199
–0.7 to –4
–50
1
–15
15
FEATURES
BENEFITS
APPLICATIONS
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 5 pA
D Low Noise
D High CMRR: 100 dB
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High Speed Comparators
D Impedance Converters
DESCRIPTION
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with IG guaranteed at VDG = 20 V.
The hermetically-sealed TO-71 package is available with full
military
processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-71
Top View
G1
S1
D1
G2
D2
S2
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
–50 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.)
300
_C
. . . . . . . . . . . . . . . . . .
Storage Temperature
–65 to 200
_C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–55 to 150
_C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation :
Per Sidea
250 mW
. . . . . . . . . . . . . . . . . . . . . . . .
Totalb
500 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2 mW/
_C above 85_C
b.
Derate 4 mW/
_C above 85_C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5196-2 | 制造商:Vishay Siliconix 功能描述:SS T092 GP XSTR PNP 100V -LEAD FREE - Bulk |
| 2N5196-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5197 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5197-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5198 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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