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参数资料
| 型号： | 2N5196 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 封装： | HERMETIC SEALED PACKAGE-6 |
| 文件页数： | 3/7页 |
| 文件大小： | 65K |
| 代理商： | 2N5196 |
2N5196/5197/5198/5199
Vishay Siliconix
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-3
SPECIFICATIONS FOR 2N5198 AND 2N5199 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5198
2N5199
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V(BR)GSS
IG = –1 mA, VDS = 0 V
–57
–50
Gate-Source Cutoff Voltage
VGS(off)
VDS = 20 V, ID = 1 nA
–2
–0.7
–4
–0.7
–4
V
Saturation Drain Currentb
IDSS
VDS = 20 V, VGS = 0 V
3
0.7
7
0.7
7
mA
VGS = –30 V, VDS = 0 V
–10
–25
pA
Gate Reverse Current
IGSS
TA = 150_C
–20
–50
nA
VDG = 20 V, ID = 200 mA
–5
–15
pA
Gate Operating Current
IG
TA =125_C
–0.8
–15
nA
Gate-Source Voltage
VGS
VDG = 20 V, ID = 200 mA
–1.5
–0.2
–3.8
–0.2
–3.8
V
Dynamic
Common-Source
Forward Transconductance
gfs
2.5
1
4
1
4
mS
Common-Source
Output Conductance
gos
VDS = 20 V, VGS = 0 V, f = 1 kHz
2
50
mS
Common-Source
Forward Transconductance
gfs
VDS = 20 V, ID = 200 mA
0.8
0.7
1.6
0.7
1.6
mS
Common-Source
Output Conductance
gos
VDS = 20 V, ID = 200 mA
f = 1 kHz
1
4
mS
Common-Source Input Capacitance
Ciss
3
6
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 20 V, VGS = 0 V, f = 1 MHz
1
2
pF
Equivalent Input Noise Voltage
en
VDS = 20 V, VGS = 0 V, f = 1 kHz
9
20
nV
√Hz
Noise Figure
NF
VDS = 20 V, VGS = 0 V
f = 100 Hz, RG = 10 MW
0.5
dB
Matching
Differential Gate-Source Voltage
|V
GS1–VGS2
|
VDG = 20 V, ID = 200 mA
10
15
mV
Gate-Source Voltage Differential
Change with Temperature
D|V
GS1–VGS2
|
DT
VDG = 20 V, ID = 200 mA
TA = –55 to 125_C
20
40
mV/_C
Saturation Drain Current Ratio
I
DSS1
I
DSS2
VDS = 20 V, VGS = 0 V
0.97
0.95
1
0.95
1
Transconductance Ratio
g
fs1
g
fs2
VDS = 20 V, ID = 200 mA
0.97
0.95
1
0.95
1
Differential Output Conductance
|g
os1–gos2
|
VDS = 20 V, ID = 200 mA
f = 1 kHz
0.2
1
mS
Differential Gate Current
|I
G1–IG2
|
VDG = 20 V, ID = 200 mA , TA = 125_C
0.1
5
nA
Common Mode Rejection Ratioc
CMRR
VDG = 10 to 20 V, ID = 200 mA
97
dB
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NQP
b.
Pulse test: PW
v300 ms duty cycle v3%.
c.
This parameter not registered with JEDEC.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5196-2 | 制造商:Vishay Siliconix 功能描述:SS T092 GP XSTR PNP 100V -LEAD FREE - Bulk |
| 2N5196-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5197 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5197-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5198 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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