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| 型号： | 2N5196 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 封装： | HERMETIC SEALED PACKAGE-6 |
| 文件页数： | 4/7页 |
| 文件大小： | 65K |
| 代理商： | 2N5196 |
2N5196/5197/5198/5199
Vishay Siliconix
www.vishay.com
8-4
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
5
0
–5
–4
–3
–2
–1
4
2
1
0
030
20
10
40
50
3
2.6
2.2
1
3
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
VGS(off) – Gate-Source Cutoff Voltage (V)
VDG – Drain-Gate Voltage (V)
0.1 pA
10 pA
1 pA
IDSS @ VDS = 15 V, VGS = 0 V
gfs @ VDG = 15 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
IGSS @ 125
_C
IGSS @ 25
_C
TA = 125_C
TA = 25_C
200
mA
100 pA
1 nA
10 nA
100 nA
5
4
3
2
1
0
Output Characteristics
VDS – Drain-Source Voltage (V)
–0.2 V
–0.4 V
–0.6 V
–0.3 V
–0.9 V
–0.6 V
–2.1 V
–1.5 V
–0.8 V
–1.0 V
–1.2 V
–1.8 V
VGS(off) = –2 V
VGS = 0 V
5
4
3
2
1
0
VGS = 0 V
VGS(off) = –3 V
2
0
0.6
0.8
0.4
0.2
1
1.6
1.2
0.8
0.4
0
Output Characteristics
VDS – Drain-Source Voltage (V)
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
–1.4 V
VGS(off) = –2 V
VGS = 0 V
2.5
2.0
1.5
1.0
0.5
0
0.6
0.8
0.4
0.2
1
VGS = 0 V
VGS(off) = –3 V
–0.3 V
–0.9 V
–0.6 V
–2.1 V
–1.5 V
–1.2 V
–2.4 V
–1.8 V
1.8
1.4
50
mA
IG @ ID = 200
mA
–1.6 V
012
16
8
420
–1.4 V
–2.4 V
012
16
8
420
50
mA
g
fs
–
Forward
T
ransconductance
(mS)
I DS
S
–
Saturation
Drain
Current
(mA)
I G
–
Gate
Leakage
I D
–
Drain
Current
(mA)
I D
–
Drain
Current
(mA)
I D
–
Drain
Current
(mA)
I D
–
Drain
Current
(mA)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5196-2 | 制造商:Vishay Siliconix 功能描述:SS T092 GP XSTR PNP 100V -LEAD FREE - Bulk |
| 2N5196-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5197 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5197-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5198 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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