- 您现在的位置：买卖IC网 > PDF目录30440 > 2N5196 (VISHAY SILICONIX) 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 PDF资料下载
参数资料
| 型号： | 2N5196 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 封装： | HERMETIC SEALED PACKAGE-6 |
| 文件页数： | 6/7页 |
| 文件大小： | 65K |
| 代理商： | 2N5196 |
2N5196/5197/5198/5199
Vishay Siliconix
www.vishay.com
8-6
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
100
1 k
100 k
10 k
10
0
–12
–16
–20
–8
–4
8
6
4
2
0
VGS – Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
–
Input
Capacitance
(pF)
C
iss
VDS = 0 V
5 V
20 V
f = 1 MHz
5
0
–12
–20
–16
–8
–4
4
3
2
1
0
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
–
Reverse
Feedback
Capacitance
(pF)
C
rss
VGS – Gate-Source Voltage (V)
VDS = 0 V
5 V
15 V
f = 1 MHz
16
12
8
4
0
20
Equivalent Input Noise Voltage vs. Frequency
f – Frequency (Hz)
VDS = 20 V
ID @ 200
mA
VGS = 0 V
2.5
2.0
1.5
1.0
0.5
0
0.01
0.1
1
Output Conductance vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125
_C
0.01
0.1
1
2.5
2.0
1.5
1.0
0.5
0
Common-Source Forward Transconductance
vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125
_C
1 k
0
–3
–5
–4
–2
–1
800
600
400
200
0
10
8
6
4
2
0
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz
rDS
gos
25
_C
25
_C
VGS(off) = –2 V
VDS = 20 V
f = 1 kHz
VGS(off) = –2 V
VDS = 20 V
f = 1 kHz
15 V
20 V
S)
g
os
–
Output
Conductance
(
m
e
n
–
Noise
V
oltage
nV
/
Hz
g
os
–
Output
Conductance
(
S)
r DS
(on)
–
Drain-Source
On-Resistance
(
)
g
fs
–
Forward
T
ransconductance
(mS)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5210RLRA | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5210RL1 | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5210RL | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5209RLRE | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5209RLRA | 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5196-2 | 制造商:Vishay Siliconix 功能描述:SS T092 GP XSTR PNP 100V -LEAD FREE - Bulk |
| 2N5196-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5197 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5197-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5198 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。