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参数资料
| 型号： | 2N5461-E3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA |
| 封装： | PLASTIC, TO-92, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 66K |
| 代理商： | 2N5461-E3 |
2N/SST5460 Series
Vishay Siliconix
www.vishay.com
9-2
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N/SST5460
2N/SST5461
2N/SST5462
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS
IG = 10 mA , VDS = 0 V
55
40
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = –15 V, ID = –1 mA
0.75
6
1
7.5
1.8
9
V
Saturation Drain Currentb
IDSS
VDS = –15 V, VGS = 0 V
–1
–5
–2
–9
–4
–16
mA
VGS = 20 V, VDS = 0 V
0.003
5
nA
Gate Reverse Current
IGSS
TA = 100_C
0.0003
1
mA
Gate Operating Current
IG
VDG = –20 V, ID = –0.1 mA
3
Drain Cutoff Current
ID(off)
VDS = –15 V, VGS = 10 V
–5
pA
ID = –0.1 mA
1.3
0.5
4
Gate-Source Voltage
VGS
VDS = –15 V
ID = –0.2 mA
2.3
0.8
4.5
ID = –0.4 mA
3.8
1.5
6
V
Gate-Source
Forward Voltage
VGS(F)
IG = –1 mA , VDS = 0 V
–0.7
Dynamic
Common-Source
Forward Transconductance
gfs
VDS = –15 V, VGS = 0 V
1
4
1.5
5
2
6
mS
Common-Source
Output Conductance
gos
VDS = –15 V, VGS = 0 V
f = 1 kHz
75
mS
Common-Source
2N
4.5
7
Reverse Transfer
Capacitance
Ciss
SST
4.5
Common-Source
Reverse Transfer
Capacitance
Crss
VDS = –15 V, VGS = 0 V
f = 1 MHz
1.2
pF
Common-Source
2N
1.5
2
Common-Source
Output Capacitance
Coss
SST
1.5
Equivalent Input
VDS = –15 V, VGS = 0 V
2N
15
115
nV
√
Equivalent Input
Noise Voltage
en
VDS = –15 V, VGS = 0 V
f = 100 Hz
SST
15
nV
√Hz
VDS = –15 V, VGS = 0 V
W
2N
0.2
2.5
Noise Figure
NF
f = 100 Hz, RG = 1 MW
BW = 1 Hz
SST
0.2
dB
Notes
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
PSCIB
b.
Pulse test: PW
v300 ms duty cycle v2%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5461G | 功能描述:JFET 40V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5461RLRA | 功能描述:JFET 40V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5461RLRAG | 功能描述:JFET 40V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5462 | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5462 | 制造商:UNBRANDED 功能描述:TRANSISTOR JFET P TO-92 |
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