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参数资料
| 型号： | 2N5461-E3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA |
| 封装： | PLASTIC, TO-92, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 66K |
| 代理商： | 2N5461-E3 |
2N/SST5460 Series
Vishay Siliconix
www.vishay.com
9-4
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
–5
0
0.4
0.8
1.2
1.6
2
–4
–3
–2
–1
0
Transfer Characteristics
TA = –55_C
125
_C
–
Drain
Current
(mA)
I
D
VGS – Gate-Source Voltage (V)
25
_C
–10
0123
4
5
–8
–6
–4
–2
0
Transfer Characteristics
VGS – Gate-Source Voltage (V)
TA = –55_C
125
_C
–
Drain
Current
(mA)
I
D
25
_C
–0.1
–1
–10
1000
800
0
600
400
200
On-Resistance vs. Drain Current
ID – Drain Current (mA)
TA = 25_C
VGS(off) = 1.5 V
3 V
4 V
10 nA
1 nA
0.1 pA
0
–30
–40
–20
–10
–50
100 pA
10 p A
1 pA
Gate Leakage Current
VDG – Drain-Gate Voltage (V)
–
Gate
Leakage
I
G
IGSS @ 125
_C
IGSS @ 25
_C
TA = 125_C
TA = 25_C
–5 mA
5
0
0.4
0.8
1.2
1.6
2
4
3
2
1
0
Transconductance vs. Gate-Source Voltage
TA = –55_C
25
_C
125
_C
VGS – Gate-Source Voltage (V)
5
0123
4
5
4
3
2
1
0
Transconductance vs. Gate-Source Voltage
TA = –55_C
25
_C
125
_C
VGS – Gate-Source Voltage (V)
VGS(off) = 1.5 V
VDS = –15 V
VGS(off) = 3 V
VDS = –15 V
VGS(off) = 1.5 V
VDS = –15 V
f = 1 kHz
VGS(off) = 3 V
VDS = –15 V
f = 1 kHz
–1 mA
–0.1 mA
r DS
(on)
–
Drain-Source
On-Resistance
(
)
g
fs
–
Forward
T
ransconductance
(mS)
g
fs
–
Forward
T
ransconductance
(mS)
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| 2N5461/D81Z | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
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| 2N3820/D81Z | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5461G | 功能描述:JFET 40V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5461RLRA | 功能描述:JFET 40V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5461RLRAG | 功能描述:JFET 40V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5462 | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5462 | 制造商:UNBRANDED 功能描述:TRANSISTOR JFET P TO-92 |
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