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参数资料
| 型号： | 2N5461-E3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA |
| 封装： | PLASTIC, TO-92, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 66K |
| 代理商： | 2N5461-E3 |
2N/SST5460 Series
Vishay Siliconix
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
www.vishay.com
9-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
–0.01
–0.1
–1
100
80
0
60
40
20
A
V
–
V
oltage
Gain
ID – Drain Current (mA)
Assume VDD = –15 V, VDS = –5 V
VGS(off) = 1.5 V
Circuit Voltage Gain vs. Drain Current
10
0
4
8
12
16
20
8
6
4
2
0
5
0
4
8
12
16
20
0
VGS – Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
–
Input
Capacitance
(pF)
C
iss
–5 V
–15 V
f = 1 MHz
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
–
Reverse
Feedback
Capacitance
(pF)
C
rss
VGS – Gate-Source Voltage (V)
–5 V
–15 V
f = 1 MHz
2.5
–0.1
–1
–10
10
1
0.1
Common-Source Forward Transconductance
vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125
_C
10
100
1 k
100 k
10 k
100
10
1
–0.1
–1
–10
20
16
0
12
8
4
Output Conductance vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125
_C
Equivalent Input Noise Voltage vs. Frequency
f – Frequency (Hz)
VDS = –15 V
ID = –0.1 mA
ID = –1 mA
25
_C
VDS = –15 V
f = 1 kHz
VGS(off) = 3 V
VDS = –15 V
f = 1 kHz
VGS(off) = 3 V
25
_C
A
V +
g
fs RL
1
) R
Lgos
R
L +
10 V
I
D
g
fs
–
Forward
T
ransconductance
(
S)
e
n
–
Noise
V
oltage
nV
/
Hz
g
os
–
Output
Conductance
(
S)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5461/D81Z | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2N3820/J05Z | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2N3820/D81Z | P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2N5457/D11Z | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5461G | 功能描述:JFET 40V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5461RLRA | 功能描述:JFET 40V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5461RLRAG | 功能描述:JFET 40V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5462 | 功能描述:JFET P-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2N5462 | 制造商:UNBRANDED 功能描述:TRANSISTOR JFET P TO-92 |
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