- 您现在的位置：买卖IC网 > PDF目录30449 > 2N5655 (MOTOROLA INC) 0.5 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-225AA PDF资料下载
参数资料
| 型号： | 2N5655 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.5 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 封装： | PLASTIC, CASE 77-08, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 176K |
| 代理商： | 2N5655 |
1
Motorola Bipolar Power Transistor Device Data
Plastic NPN Silicon
High-Voltage Power Transistor
. . . designed for use in line–operated equipment such as audio output amplifiers;
low–current, high–voltage converters; and AC line relays.
Excellent DC Current Gain — hFE = 30–250 @ IC = 100 mAdc
Current–Gain — Bandwidth Product —
fT = 10 MHz (Min) @ IC = 50 mAdc
MAXIMUM RATINGS (1)
Rating
Symbol
2N5655
2N5656
2N5657
Unit
Collector–Emitter Voltage
VCEO
250
300
350
Vdc
Collector–Base Voltage
VCB
275
325
375
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
Peak
IC
0.5
1.0
Adc
Base Current
IB
0.25
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
20
0.16
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
6.25
_C/W
(1) Indicates JEDEC Registered Data.
40
0
25
50
75
100
150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
30
20
10
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
125
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
Figure 2. Sustaining Voltage Test Circuit
50 mH
200
50 V
+
–
+
X
Y
TO SCOPE
Hg RELAY
300
1.0
6.0 V
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5655/D
Motorola, Inc. 1995
2N5655
2N5656
2N5657
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 – 300 – 350 VOLTS
20 WATTS
CASE 77–08
TO–225AA TYPE
REV 3
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5662 | 2000 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N5663R1 | 1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-205AD |
| 2N5663 | 2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-5 |
| 2N5661 | 2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N5662 | Si, NPN, RF POWER TRANSISTOR, TO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5655/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Plastic NPN Silicon High-Voltage Power Transistor |
| 2N5655_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic NPN Silicon High−Voltage Power Transistor |
| 2N5655G | 功能描述:两极晶体管 - BJT 1A 250V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5656 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2N5657 | 功能描述:两极晶体管 - BJT NPN Fast Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。