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参数资料
| 型号： | 2N5655 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.5 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 封装： | PLASTIC, CASE 77-08, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 176K |
| 代理商： | 2N5655 |
2N5655 2N5656 2N5657
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
2N5655
(IC = 100 mAdc (inductive), L = 50 mH)
2N5656
2N5657
VCEO(sus)
250
300
350
—
Vdc
Collector–Emitter Breakdown Voltage
2N5655
(IC = 1.0 mAdc, IB = 0)
2N5656
2N5657
V(BR)CEO
250
300
350
—
Vdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
2N5655
(VCE = 200 Vdc, IB = 0)
2N5656
(VCE = 250 Vdc, IB = 0)
2N5657
ICEO
—
0.1
mAdc
Collector Cutoff Current
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc)
2N5655
(VCE = 300 Vdc, VEB(off) = 1.5 Vdc)
2N5656
(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)
2N5657
(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5655
(VCE = 200 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5656
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5657
ICEX
—
0.1
1.0
mAdc
Collector Cutoff Current
(VCB = 275 Vdc, IE = 0)
2N5655
(VCB = 325 Vdc, IE = 0)
2N5656
(VCB = 375 Vdc, IE = 0)
2N5657
ICBO
—
10
Adc
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
IEBO
—
10
Adc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 250 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
25
30
15
5.0
—
250
—
—
Collector–Emitter Saturation Voltage (1)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 250 mAdc, IB = 25 mAdc)
(IC = 500 mAdc, IB = 100 mAdc)
VCE(sat)
—
1.0
2.5
10
Vdc
Base–Emitter Voltage (1)
(IC = 100 mAdc, VCE = 10 Vdc)
VBE
—
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz)
fT
10
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
—
25
pF
Small–Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
—
—
* Indicates JEDEC Registered Data for 2N5655 Series.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
(2) fT is defined as the frequency at which |hfe| extrapolates to unity.
1.0
20
Figure 3. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.5
0.2
0.1
0.01
30
40
60
100
200
300 400
600
Second Breakdown Limit
Thermal Limit @ TC = 25°C
Bonding Wire Limit
I C
,COLLECT
OR
CURRENT
(AMP)
Curves apply below rated VCEO
TJ = 150°C
dc
1.0 ms
0.05
0.02
10
s
2N5655
2N5656
2N5657
500
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 3 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5655/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Plastic NPN Silicon High-Voltage Power Transistor |
| 2N5655_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Plastic NPN Silicon High−Voltage Power Transistor |
| 2N5655G | 功能描述:两极晶体管 - BJT 1A 250V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5656 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2N5657 | 功能描述:两极晶体管 - BJT NPN Fast Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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