参数资料
型号: 2N5684
厂商: AMERICAN MICROSEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
封装: TO-3, 2 PIN
文件页数: 1/1页
文件大小: 233K
代理商: 2N5684
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2N5684 Information
Category Transistors
2N5684 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 80
V(BR)CBO (V) : 80
I(C) Max. (A) : 50
Absolute Max. Power Diss. (W) : 300
Maxim um Operating Tem p (шC) : 200х
I(CBO) Max. (A) : 2.0m
@V(CBO) (V) (Test Condition) : 80
V(CE)sat Max. (V) : 5.0
@I(C) (A) (Test Condition) : 50
@I(B) (A) (Test Condition) : 10
h(FE) Min. Current gain. : 15
h(FE) Max. Current gain. : 60
@I(C) (A) (Test Condition) : 25
@V(CE) (V) (Test Condition) : 2.0
f(T) Min. (Hz) Transition Freq : 2.0M
@I(C) (A) (Test Condition) : 5.0
@V(CE) (V) (Test Condition) : 10
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-3var
Mounting Style : T
Description :
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相关代理商/技术参数
参数描述
2N5684/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:High-Current Complementary Silicon Power Transistors
2N5684_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High−Current Complementary Silicon Power Transistors
2N5684G 功能描述:两极晶体管 - BJT 50A 80V 300W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N5684G 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR
2N5685 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 60V 50A 3PIN TO-3 - Bulk 制造商:Microsemi 功能描述:Microsemi 2N5685 GP BJTs 制造商:NTE Electronics 功能描述:TRANSISTOR BIPOLAR NPN 80V 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 80V, 50A, TO-3 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, NPN, 80V, 50A, TO-3-2; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:300W; DC Collector Current:50A; DC Current Gain hFE:15; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes