参数资料
型号: 2N6496-T257
厂商: SEMELAB LTD
元件分类: 功率晶体管
英文描述: 15 A, 110 V, NPN, Si, POWER TRANSISTOR, TO-257
文件页数: 1/2页
文件大小: 26K
代理商: 2N6496-T257
LAB
SEME
2N6496–T257
Prelim. 2/96
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
HIGH CURRENT
HIGH POWER
HIGH SPEED
NPN SILICON TRANSISTOR
Designed for switching and amplifier
circuits in industrial and commercial
applications.
VCBO
Collector – Base Voltage
VCER(sus)
Collector – Base Sustaining Voltage RBE 50 W
VCEO(sus)
Collector – Base Sustaining Voltage With Base Open
VEBO
Emitter – Base Voltage
IC
Continuous Collector Current
IB
Continuous Base Current
PD
Total Device Dissipation at TC = 25°C
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
TL
Lead Soldering Temperature (0.8mm from case for 10 secs.)
RqJC
Thermal Resistance Junction – Case
150V
130V
110V
7V
15A
5A
80W
–65 to 200°C
–65 to 175°C
230°C
1.875°C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO–257 Package.
Pin 1 – Base
Pin 2 – Collector
Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
12 3
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
10.
41
(
0
.4
1
0
)
10.
92
(
0
.4
3
0
)
13.
3
8
(
0
.527
)
13.
6
4
(
0
.537
)
1
6
.3
8
(
0
.645)
1
6
.8
9
(
0
.665)
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
1
2
.0
7
(
0
.500)
1
9
.0
5
(
0
.750)
Dia.
相关PDF资料
PDF描述
2N6510 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N6517 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N651A 500 mA, 30 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5
2N6544.MOD 8 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N656 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
相关代理商/技术参数
参数描述
2N6497 功能描述:两极晶体管 - BJT 5A 250V 80W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N6497/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:High Voltage NPN Silicon Power Transistors
2N6497G 功能描述:两极晶体管 - BJT 5A 250V 80W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N6498 制造商:BOCA 制造商全称:Boca Semiconductor Corporation 功能描述:HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
2N6499 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR NPN 350V TO-220 制造商:SPC Multicomp 功能描述:TRANSISTORNPN5A350VTO220 制造商:SPC Multicomp 功能描述:TRANSISTOR,NPN,5A,350V,TO220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, NPN, 350V, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:5MHz; Power Dissipation Pd:80W; DC Collector Current:5A; DC Current Gain hFE:75; No. of Pins:3 ;RoHS Compliant: Yes