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参数资料
| 型号： | 2N6496-T257 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 110 V, NPN, Si, POWER TRANSISTOR, TO-257 |
| 文件页数： | 2/2页 |
| 文件大小： | 26K |
| 代理商： | 2N6496-T257 |
Notes
* Pulse Test: tp 350ms, d =2%
1) These tests must not be measured on a curve tracer.
Parameter
Test Conditions
Min.
Typ.
Max. Units
VCE = 130V
VBE = 0
TC = 150°C
VEB = 7V
IC = 0
VCE = 2V
IC = 8A
VCE = 10V
IC = 2A
f = 5MHz
IC = 0.2A
IB = 0
IC = 0.2A
IB = 0
RBE 50W
IC = 0IE = 50mA
VCE = 2V
IC = 8A
IB = 0.8A
IC = 8A
IB = 0.8A
VCB = 10V
IE = 0
VCC = 30V
IC = 8A
IB1 = IB2 = 0.8A
VCE = 10V
IC = 10A
LAB
SEME
2N6496–T257
Prelim. 2/96
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
ICEV
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE*
DC Current Gain
|hFE|
DC Current Gain
VCEO(sus) Collector – Emitter Sustaining Voltage
1
VCER(sus) Collector – Emitter Sustaining Voltage
1
VEBO
Emitter – Base Voltage
VBE*
Base – Emitter Voltage
VCE(sat)*
Collector – Emitter Saturation Voltage
VBE(sat)*
Base – Emitter Saturation Voltage
Cob
Output Capacitance
tr
Rise Time
ts
Storage Time
tf
Fall Time
RqJC
Thermal Resistance Junction – Case
20
25
50
12
100
12
110
130
7
1.6
1.0
2.0
400
0.5
1.5
0.5
1.875
mA
—
V
pF
ms
°C/W
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