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参数资料
| 型号： | 2N6497BUBU |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 23/61页 |
| 文件大小： | 366K |
| 代理商： | 2N6497BUBU |
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2N6497 2N6498
3–138
Motorola Bipolar Power Transistor Device Data
Figure 3. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
r(t)
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
θJC(max) = 1.56°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03
0.3
3.0
30
300
BONDING WIRE LIMITED
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
20
Figure 4. Active–Region Safe Operating Area
2.0
10
20
500
TC = 25°C
0.2
5.0
0.5
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
70
1.0
0.02
dc
5.0
100
7.0
2N6497
2N6498
CURVES APPLY BELOW RATED VCEO
5.0 ms
1.0 ms
100
s
I C
,COLLECT
OR
CURRENT
(AMP)
0.1
0.05
30
50
300
200
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 4 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown. Second breakdown limita-
tions do not derate the same as thermal limitations. Allow-
able current at the voltage shown on Figure 4 may be found
at any case temperature by using the appropriate curve on
Figure 6.
Figure 5. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
VCC = 125 V
IC/IB = 5.0
TJ = 25°C
ts
tf
t,TIME
(
s)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.3
0.2
0.05
5.0
1.0
0.1
2.0
0.07
3.0
0.3
0.2
0.5 0.7
100
80
60
20
0
20
40
60
80
100
120
140
160
Figure 6. Power Derating
TC, CASE TEMPERATURE (°C)
POWER
DERA
TING
FACT
OR
(%)
THERMAL DERATING
SECOND BREAKDOWN DERATING
40
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6497G | 功能描述:两极晶体管 - BJT 5A 250V 80W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6498 | 制造商:BOCA 制造商全称:Boca Semiconductor Corporation 功能描述:HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
| 2N6499 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR NPN 350V TO-220 制造商:SPC Multicomp 功能描述:TRANSISTORNPN5A350VTO220 制造商:SPC Multicomp 功能描述:TRANSISTOR,NPN,5A,350V,TO220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, NPN, 350V, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:5MHz; Power Dissipation Pd:80W; DC Collector Current:5A; DC Current Gain hFE:75; No. of Pins:3 ;RoHS Compliant: Yes |
| 2N65 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:2A, 650V N-CHANNEL POWER MOSFET |
| 2N65_11 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:2A, 650V N-CHANNEL POWER MOSFET |
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