- 您现在的位置：买卖IC网 > PDF目录41446 > 2N6519RL (ON SEMICONDUCTOR) 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2N6519RL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, TO-226AA, 3 PIN |
| 文件页数： | 12/37页 |
| 文件大小： | 430K |
| 代理商： | 2N6519RL |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页当前第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页
NPN 2N6515 2N6517 PNP 2N6519 2N6520
2–70
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (Continued)
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
2N6515
(VCB = 200 Vdc, IE = 0)
2N6519
(VCB = 250 Vdc, IE = 0)
2N6517, 2N6520
ICBO
—
50
nAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
2N6515, 2N6517
(VEB = 4.0 Vdc, IC = 0)
2N6519, 2N6520
IEBO
—
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc)
2N6515
2N6519
2N6517, 2N6520
hFE
35
30
20
50
45
30
50
45
30
45
40
20
25
20
15
—
300
270
200
220
200
—
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
—
0.30
0.35
0.50
1.0
Vdc
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
VBE(sat)
—
0.75
0.85
0.90
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
VBE(on)
—
2.0
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
fT
40
200
MHz
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
6.0
pF
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2N6515, 2N6517
2N6519, 2N6520
Ceb
—
80
100
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
ton
—
200
s
Turn–Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)
toff
—
3.5
s
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6519RLRA | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N6519 | 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5221 | 600 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4058 | 50 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N4971 | 600 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6519RLRA | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N6519TA | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N6519TA_Q | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N651A | 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述: |
| 2N651AJ | 制造商:Motorola Inc 功能描述: |
发布紧急采购，3分钟左右您将得到回复。