参数资料
型号: 2N6519RL
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: PLASTIC, TO-226AA, 3 PIN
文件页数: 23/37页
文件大小: 430K
代理商: 2N6519RL
NPN 2N6515 2N6517 PNP 2N6519 2N6520
2–71
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
h
FE
,D
C
U
RRENT
G
AIN
200
100
20
30
50
70
VCE = 10 V
TJ = 125°C
25
°C
–55
°C
2N6515
NPN
IC, COLLECTOR CURRENT (mA)
–100
–1.0
– 2.0 – 3.0
– 5.0 – 7.0 –10
– 20 – 30
– 50 – 70
h
FE
,DC
CURRENT
GAIN
200
100
20
30
50
70
VCE = –10 V
TJ = 125°C
25
°C
–55
°C
2N6519
PNP
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70
200
100
10
20
50
70
VCE = 10 V
TJ = 125°C
25
°C
–55
°C
2N6517
IC, COLLECTOR CURRENT (mA)
–100
–1.0
– 2.0 – 3.0
– 5.0 – 7.0 –10
– 20 – 30
– 50 – 70
VCE = –10 V
TJ = 125°C
25
°C
–55
°C
2N6520
Figure 3. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
100
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70
100
20
30
50
70
2N6515, 2N6517
IC, COLLECTOR CURRENT (mA)
–100
–1.0
– 2.0 – 3.0
– 5.0 – 7.0 –10
– 20 – 30
– 50 – 70
2N6519, 2N6520
f,
C
U
RRENT–
G
AIN
BAN
DW
ID
T
H
PRO
DU
CT
(
M
Hz
)
T
f
,CURRENT–GAIN
BANDWIDTH
PRODUCT
(MHz)
T
h
FE
,D
C
U
RRENT
G
AIN
h
FE
,DC
CURRENT
GAIN
10
100
20
30
50
70
10
TJ = 25°C
VCE = 20 V
f = 20 MHz
TJ = 25°C
VCE = – 20 V
f = 20 MHz
30
200
100
10
20
50
70
30
相关PDF资料
PDF描述
2N6519RLRA 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N6519 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5221 600 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4058 50 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N4971 600 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
2N6519RLRA 制造商:Rochester Electronics LLC 功能描述:- Bulk
2N6519TA 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N6519TA_Q 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N651A 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述:
2N651AJ 制造商:Motorola Inc 功能描述: