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参数资料
| 型号： | 2N6576 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | METAL, TO-3, 2 PIN |
| 文件页数： | 12/60页 |
| 文件大小： | 363K |
| 代理商： | 2N6576 |
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2N6576 2N6577 2N6578
3–145
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
2N6576
2N6577
2N6578
VCEO(sus)
60
90
120
—
Vdc
Collector Cutoff Current (VCE = Rated Value)
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCER = Rated VCEO(sus) Value, RBE = 10 k, TC = 150_C)
ICER
—
5.0
mAdc
Collector Cutoff Current
VCEX = Rated VCEO(sus) Value, VBE(off) = 1.5 Vdc)
ICEV
—
5.0
mAdc
Collector Cutoff Current (VCB = Rated Value)
ICBO
—
0.5
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 15 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
(IC = 0.4 Adc, VCE = 3.0 Vdc)
hFE
100
500
2000
200
—
5,000
20,000
—
—
Collector–Emitter Saturation Voltage
(IC = 15 Adc, IB = 0.15 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
VCE(sat)
—
4.0
2.8
Vdc
Base–Emitter Saturation Voltage
(IC = 15 Adc, IB = 0.15 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
VBE(sat)
—
4.5
3.5
Vdc
Collector–Emitter Diode Voltage Drop
(IEC = 15 Adc)
VF
—
4.5
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common–Emitter Small–Signal Short–Circuit Current Transfer Ratio
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
|hfe|
10
200
—
SWITCHING CHARACTERISTICS
RESISTIVE LOAD (Figure 2)
Delay Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = 0.1 Adc,
td
—
0.15
s
Rise Time
(VCC 30 Vdc, IC 10 Adc, IB1 0.1 Adc,
tp = 300 s, Duty Cycle v 2.0%)
tr
—
1.0
s
Storage Time
(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 0.1 Adc,
ts
—
2.0
s
Fall Time
(VCC 30 Vdc, IC 10 Adc, IB1 IB2 0.1 Adc,
tp = 300 s, Duty Cycle v 2.0%)
tf
—
7.0
s
* Indicates JEDEC Registered Data
(1) Pulse test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
BONDING WIRE LIMITED
THERMAL LIMIT, SINGLE PULSE,
TC = 25°C
SECOND BREAKDOWN LIMIT
40
Figure 1. Rated Forward Biased
Safe–Operating Area
5.0
10
20
150
0.2
10
0.5
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
60
1.0
dc
2.0
2N6576
2N6577
2N6578
100
s
I C
,C
OLLE
CT
OR
C
URREN
T
(AMP
)
0.1
40
100
0.05
2.0
TJ = 200°C
5.0
1.0 ms
5.0 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10%.
TJ(pk) may be calculated from the data in Figure 6. At high
case temperatures thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6576_1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN Silicon Power Darlington Transistors |
| 2N6577 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Bipolar NPN Device |
| 2N6578 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:NPN SILICON POWER DARLINGTON TRANSISTORS |
| 2N6579 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 12A 3PIN TO-3 - Bulk |
| 2N657A | 功能描述:两极晶体管 - BJT Small Signal Transistor Gen Purp RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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