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参数资料
| 型号： | 2N6660-2 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 78K |
| 代理商： | 2N6660-2 |
2N6660, VQ1004J/P
Vishay Siliconix
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
www.vishay.com
11-1
N-Channel 60-V (D-S) Single and Quad MOSFETs
PRODUCT SUMMARY
Part Number
V(BR)DSS Min (V)
rDS(on) Max (W)
VGS(th) (V)
ID (A)
2N6660
3 @ VGS = 10 V
0.8 to 2
1.1
VQ1004J/P
60
3.5 @ VGS = 10 V
0.8 to 2.5
0.46
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 1.3 W
D Low Threshold: 1.7 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 8 ns
D Low Input and Output Leakage
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
1
2
3
TO-205AD
(TO-39)
Top View
D
G
S
Plastic: VQ1004J
Sidebraze: VQ1004P
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D1
D4
S1
S4
G1
G4
NC
G2
G3
S2
S3
D2
D3
N
2N6660
Device Marking
Top View
VQ1004J
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
VQ1004P
“S” fllxxyy
Device Marking
Side View
2N6660
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single
Total Quad
Parameter
Symbol
2N6660
VQ1004J
VQ1004P
VQ1004J/P
Unit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
"20
"30
"20
V
Continuous Drain Current
TC= 25_C
1.1
0.46
"0.46
Continuous Drain Current
(TJ = 150_C)
TC= 100_C
ID
0.8
0.26
A
Pulsed Drain Currenta
IDM
3
2
TC= 25_C
6.25
1.3
2
Power Dissipation
TC= 100_C
PD
2.5
0.52
0.8
W
Thermal Resistance, Junction-to-Ambientb
RthJA
170
0.96
62.5
_
Thermal Resistance, Junction-to-Case
RthJC
20
_C/W
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
Notes
a.
Pulse width limited by maximum junction temperature.
b.
This parameter not registered with JEDEC.
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6660-G | 410 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 2N6660B-1 | 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6660B-2 | 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6660 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 2N6660 | 990 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6660C4 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6660CSM4 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6660CSM4_0809 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6660-E3 | 功能描述:MOSFET 60V 0.99A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N6660-E3 | 制造商:Vishay Siliconix 功能描述:N CH MOSFET 60V 1.1A TO-205AD |
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