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参数资料
| 型号： | 2N6660-G |
| 厂商： | SUPERTEX INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 410 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 封装： | GREEN PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 433K |
| 代理商： | 2N6660-G |
2N6660
GATE
SOURCE
DRAIN
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-Channel devices
Hi-Rel processing available
Applications
Motor controls
Converters
Ampliers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex 2N6660 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefcient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package Option
BV
DSS/BVDGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
2N6660
TO-39
60
3.0
1.5
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BV
DSS
Drain-to-gate voltage
BV
DGS
Gate-to-source voltage
±20V
Operating and storage temperature
-55°C to +150°C
Soldering temperature*
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Pin Conguration
N-Channel Enhancement-Mode
Vertical DMOS FET
TO-39
Product Marking
YY = Year Sealed
WW = Week Sealed
2N6660
YYWW
TO-39
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6660B-1 | 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6660B-2 | 1100 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6660 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 2N6660 | 990 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 2N6661DCSM | 900 mA, 90 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6660JANTX | 制造商:Vishay Semiconductors 功能描述: |
| 2N6660JANTXV | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60 V (D-S) MOSFET |
| 2N6660JTVP02 | 制造商:Vishay Siliconix 功能描述:19500/547 JANTXV2N6660P WITH PIND |
| 2N6660JTX02 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 0.99A 3PIN TO-205AD - Bulk 制造商:Vishay Intertechnologies 功能描述:2N6660 Series N-Channel 60 V 3 Ohm Through Hole HEXFET Power Mosfet - TO-205AD |
| 2N6660JTXL02 | 制造商:Vishay Siliconix 功能描述:19500/547 JANTX2N6660 W/SOLDER DIP |
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