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| 型号： | 2N6661JTX02 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 860 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD |
| 封装： | TO-39 TOLL LID, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 124K |
| 代理商： | 2N6661JTX02 |
2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
S11-1542-Rev. D, 01-Aug-11
1
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com/doc?67884
N-Channel 90 V (D-S) MOSFET
FEATURES
Military Qualified
Low On-Resistence: 3.6
Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage
BENEFITS
Guaranteed Reliability
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
Hi-Rel Systems
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
PRODUCT SUMMARY
VDS (V)
90
RDS(on) () at VGS = 10 V
4
Configuration
Single
1
2
3
TO-205AD
(TO-39)
Top View
D
G
S
ORDERING INFORMATION
PART
PACKAGE
DESCRIPTION/DSCC
PART NUMBER
VISHAY ORDERING
PART NUMBER
2N6661
TO-205AD
(TO-39)
Commercial
2N6661
Commercial, Lead (Pb)-free
2N6661-E3
2N6661-2
See -2 Flow Document
2N6661-2
2N6661JANTX
JANTX2N6661 (std Au leads)
2N6661JTX02
JANTX2N6661 (with solder)
2N6661JTXL02
JANTX2N6661P (with PIND)
2N6661JTXP02
2N6661JANTXV
JANTXV2N6661 (std Au leads)
2N6661JTXV02
JANTXV2N6661P (with PIND)
2N6661JTVP02
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
90
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
0.86
A
TC = 100 °C
0.54
Pulsed Drain Currenta
IDM
3
Maximum Power Dissipation
TC = 25 °C
PD
6.25
W
TA = 25 °C
0.725
Thermal Resistance, Junction-to-Ambientb
RthJA
170
°C/W
Thermal Resistance, Junction-to-Case
RthJC
20
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6661JTXL02 | 制造商:Vishay Siliconix 功能描述:WITH SOLDER DIP WAIVERED PART - Bulk |
| 2N6661JTXP02 | 制造商:Vishay Siliconix 功能描述:WITH PN D WAIVERED PART - Bulk |
| 2N6661JTXV02 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 90V 0.9A 3PIN TO-205AD - Bulk |
| 2N6661M1A | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6666 | 功能描述:两极晶体管 - BJT PNP Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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