参数资料
型号: 2N6668
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封装: TO-220, 3 PIN
文件页数: 1/4页
文件大小: 46K
代理商: 2N6668
2N6668
SILICON PNP POWER DARLINGTON TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
PNP DARLINGTON
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
s
GENERAL PURPOSE SWITCHING
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
INTERNAL SCHEMATIC DIAGRAM
December 2000
R1(typ) = 8 k
R2(typ) = 120
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
80
V
VCEO
Collector-Emitter Voltage (IB = 0)
80
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
10
A
ICM
Collector Peak Current
15
A
IB
Base Current
250
mA
Ptot
Total Dissipation at Tc
≤ 25 oC65
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
For PNP type voltage and current values are negative.
1
2
3
TO-220
1/4
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相关代理商/技术参数
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