参数资料
型号: 2N6768R1
厂商: SEMELAB LTD
元件分类: JFETs
英文描述: 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
封装: HERMETIC SEALED, METAL, TO-3, 2 PIN
文件页数: 1/2页
文件大小: 36K
代理商: 2N6768R1
IRF350
2N6768
39.95 (1.573)
max.
17.15 (0.675)
16.64 (0.655)
30.40 (1.197)
30.15 (1.187)
26.67
(1.050)
max.
11.18
(0.440)
10.67
(0.420)
1
2
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
20.32 (0.800)
18.80 (0.740)
dia.
7.87
(0.310)
6.99
(0.275)
12.07
(0.475)
11.30
(0.445)
1.78
(0.070)
1.52
(0.060)
1.09 (0.043)
0.97 (0.038)
dia.
2 plcs.
VGS
Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 0 , Tcase = 25°C)
(VGS = 0 , Tcase = 100°C)
IDM
Pulsed Drain Current 1
PD
Power Dissipation @ Tcase = 25°C
Linear Derating Factor
EAS
Single Pulse Avalanche Energy 3
IAR
Avalanche Current 1
EAR
Repetitive Avalanche Energy 1
dv/dt
Peak Diode Recovery 4
TJ , Tstg
Operating and Storage Temperature Range
±20V
14A
9.0A
56A
150W
1.2W/°C
11.3mJ
14A
15mJ
4.0V/ns
-55 to +150°C
MECHANICAL DATA
Dimensions in mm (inches)
N-CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
FEATURES
REPETITIVE AVALANCHE RATINGS
DYNAMIC DV/DT RATING
HERMETICALL SEALED
SIMPLE DRIVE REQUIREMENTS
EASE OF PARALLELING
TO–3 (TO-204AA) Metal Package
Pin 1 – Source
Pin 2 – Gate
Case – Drain
VDSS
400V
ID(cont)
14A
RDS(on)
0.300
Ω
Document Number 6252
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Notes
1) Pulse Width
≤ 300μs, Duty Cycle ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
3) VDD = 50V ,Peak IL = 14A , Starting TJ = 25°C
4) ISD ≤ 14A , di/dt ≤ 145A/μs , VDD ≤ 400V, TJ ≤ 150°C , Suggested RG = 2.35Ω
相关PDF资料
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2N6770TXV 12 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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