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参数资料
| 型号： | 2N6768R1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 封装： | HERMETIC SEALED, METAL, TO-3, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 36K |
| 代理商： | 2N6768R1 |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
400
0.46
0.300
0.400
2.0
4.0
6.0
25
250
+100
–100
2660
680
250
52
110
5.0
18
25
65
35
190
170
130
14
56
1.7
1200
250
Negligible
6.1
0.83
30
VGS = 0V
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 9.0A
VGS = 10V
ID = 14A
VDS = VGS
ID = 250μA
VDS ≥ 15V
IDS = 9.0A
VGS = 0V
VDS = 320V
TJ = 125°C
VGS = +20V
VGS = –20V
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
ID = 14A
VDS = 200V
VDD = 200V
ID = 14A
RG = 2.35Ω
IS = 28A
TJ = 25°C
VGS = 0
IF = 28A
TJ = 25°C
di / dt ≤ 100A/μsVDD ≤ 50V
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate – Source Leakage Forward
Gate – Source Leakage Reverse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge 1
Forward Turn–On Time
V
V/°C
Ω
V
S
μA
nA
pF
nC
ns
A
V
ns
μC
nH
°C/W
BVDSS
ΔBVDSS
ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD + LS
RthJC
RthJA
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Total Inductance (measured from the centre of drain pad to center of source pad)
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient (Typical socket mount)
PACKAGE CHARACTERISTICS
THERMAL CHARACTERISTICS
IRF350
2N6768
Document Number 6252
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6768T1 | 制造商:Microsemi Corporation 功能描述:MOSFET N CH 400V 14A TO-254AA |
| 2N6769 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 450V/500V |
| 2N677 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 15A I(C) | TO-3 |
| 2N6770 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-204AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 12A 3PIN TO-204AA - Bulk 制造商:Microsemi Corporation 功能描述:2N6770 - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET 500V 12A TO-204AA 制造商:International Rectifier 功能描述:N CH MOSFET, 500V, 12A, TO-204AA 制造商:International Rectifier 功能描述:N CH MOSFET, 500V, 12A, TO-204AA; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:500V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:2;RoHS Compliant: No |
| 2N6770_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
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