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参数资料
| 型号： | 2N6796 |
| 厂商： | INTERSIL CORP |
| 元件分类： | FET General Purpose Power |
| 英文描述： | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件页数： | 1/7页 |
| 文件大小： | 140K |
| 代理商： | 2N6796 |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 321-724-7143
| Copyright
Intersil Corporation 1999
2N6796
8A, 100V, 0.180 Ohm, N-Channel Power
MOSFET
The 2N6796 is an N-Channel enhancement mode silicon
gate power eld effect transistor designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate drive
power. This type can be operated directly from integrated
circuits.
Features
8A, 100V
rDS(ON) = 0.180
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-205AF
Ordering Information
PART NUMBER
PACKAGE
BRAND
2N6796
TO-205AF
2N6796
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
DRAIN
(CASE)
GATE
Data Sheet
November 1998
File Number
1594.2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6796 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39 |
| 2N6796_03 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL |
| 2N6796_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6796JANTX | 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述: |
| 2N6796JANTXV | 制造商:International Rectifier 功能描述: |
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