参数资料
型号: 2N6796
厂商: INTERSIL CORP
元件分类: FET General Purpose Power
英文描述: 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件页数: 6/7页
文件大小: 140K
代理商: 2N6796
6
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
tP
VGS
0.01
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-
VDD
tON
td(ON)
tr
90%
10%
VDS
90%
10%
tf
td(OFF)
tOFF
90%
50%
10%
PULSE WIDTH
VGS
0
0.3
F
12V
BATTERY
50k
VDS
S
DUT
D
G
IG(REF)
0
(ISOLATED
VDS
0.2
F
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR
SAME TYPE
AS DUT
Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
2N6796
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相关代理商/技术参数
参数描述
2N6796 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-39
2N6796_03 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:TMOS FET ENHANCEMENT N - CHANNEL
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2N6796JANTXV 制造商:International Rectifier 功能描述: