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参数资料
| 型号： | 2N6896 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件页数： | 2/6页 |
| 文件大小： | 77K |
| 代理商： | 2N6896 |
2001 Fairchild Semiconductor Corporation
2N6896 Rev. A
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specied
2N6896
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
-100
V
Drain to Gate Voltage (RGS = 1M) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
-100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
-6
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
-20
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
60
W
Above TC = 25
oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.48
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specications
TC = 25
oC, Unless Otherwise Specied
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
-100
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 0.25mA
-2
-
-4
V
Zero-Gate Voltage Drain Current
IDSS
VDS = -80V
-
1
A
VDS = -80V, TC = 125
oC-
-
50
A
Gate to Source Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
100
nA
Drain to Source On-Voltage (Note 2)
VDS(ON)
ID = 3.8A, VGS = -10V
-
2.28
V
ID = 6A, VGS = -10V
-
-6
V
Drain to Source On Resistance (Note 2)
rDS(ON)
ID = 3.8A, VGS = -10V
-
0.600
ID = 3.8A, VGS = 10V, TC = 125
oC
-
0.960
Forward Transconductance (Note 2)
gfs
ID = 3.8A, VDS = -10V
1
-
4
S
Input Capacitance
CISS
VGS = 0V, VDS = -25V
f = 0.1MHz
200
-
800
pF
Output Capacitance
COSS
100
-
350
pF
Reverse-Transfer Capacitance
CRSS
40
-
150
pF
Turn-On Delay Time
td(ON)
ID = 3.8A, VDS = -50V
RGEN = RGS = 15,
VGS = -10V
-
60
ns
Rise Time
tr
-
100
ns
Turn-Off Delay Time
td(OFF)
-
150
ns
Fall Time
tf
-
100
ns
Thermal Resistance Junction to Case
RθJC
-
2.083
oC/W
Source to Drain Diode Specications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 12A
0.8
-
1.6
V
Diode Reverse Recovery Time
trr
ISD = 4A, dISD/dt = 50A/s
-
375
ns
NOTES:
2. Pulsed: Pulse duration = 300
s, max, duty cycle = 2%.
3. Repetitive Rating: pulse width limited by maximum junction temperature.
2N6896
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