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参数资料
| 型号： | 2N7002-01 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/3页 |
| 文件大小： | 27K |
| 代理商： | 2N7002-01 |
DS30026 Rev. C-5
1 of 3
2N7002-01
2N7002-01
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Maximum Ratings
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS
≤ 1.0M
VDGR
60
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 1)
Continuous
Continuous @ 100
°C
Pulsed
ID
115
73
800
mA
Total Power Dissipation (Note 1)
Derating above TA = 25
°C
Pd
200
1.60
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RθJA
625
K/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
≤ 300s, duty cycle ≤ 2%.
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: K7A
Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
POWER SEMICONDUCTOR
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002-13-F | 制造商:Zetex / Diodes Inc 功能描述:Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R 制造商:DIODES 功能描述:N-CHANNEL MOSFET/ SOT-23 |
| 2N7002215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 300MA 3-SOT-23 |
| 2N7002-215 | 制造商:NXP Semiconductors 功能描述:2N7002-215 |
| 2N70027 | 制造商:Diodes Incorporated 功能描述: 制造商:Vishay Intertechnologies 功能描述: |
| 2N7002-7 | 功能描述:MOSFET 60V 200mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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