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参数资料
| 型号： | 2N7002KA |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 372K |
| 代理商： | 2N7002KA |
2011. 4. 4
1/3
SEMICONDUCTOR
TECHNICAL DATA
2N7002KA
N Channel MOSFET
ESD Protected 2000V
Revision No : 1
INTERFACE AND SWITCHING APPLICATION.
FEATURES
ESD Protected 2000V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. SOURCE
2. GATE
3. DRAIN
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=10 A
60
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
-
1
A
Gate-Body Leakage, Forward
IGSSF
VGS=20V, VDS=0V
-
10
A
Gate-Body Leakage, Reverse
IGSSR
VGS=-20V, VDS=0V
-
-10
A
ESD-Capability*
-
C=100pF, R=1.5K
Both forward and reverse
direction 3 pulse
2000
-
V
G
D
S
Type Name
Marking
Lot No.
2P
EQUIVALENT CIRCUIT
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
20
V
Drain Current
Continuous
ID
300
mA
Pulsed (Note 1)
IDP
1200
Drain Power Dissipation (Note 2)
PD
350
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
Note 1) Pulse Width
10
, Duty Cycle
1%
Note 2) Package mounted on 99% Alumina 10
8
0.6mm
*Failure cirterion : IDSS > 1 A at VDS=60V, IGSSF>10 A at VGS=20V, IGSSR>-10 A at VGS=-20V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002KA_1 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel TrenchMOS FET |
| 2N7002KA_2 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel TrenchMOS FET |
| 2N7002K-AU | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002K-AU_A0_00001 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002K-AU_A0_10001 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
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