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参数资料
| 型号： | 2N7002-01 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 2/3页 |
| 文件大小： | 27K |
| 代理商： | 2N7002-01 |
DS30026 Rev. C-5
2 of 3
2N7002-01
Electrical Characteristics
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BVDSS
60
70
V
VGS = 0V, ID = 10
A
Zero Gate Voltage Drain Current
@ TC = 25
°C
@ TC = 125
°C
IDSS
1.0
500
A
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
±10
nA
VGS =
±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
1.0
2.0
V
VDS =VGS, ID =-250
A
Static Drain-Source On-Resistance
@ Tj = 25
°C
@Tj = 125
°C
RDS (ON)
3.2
4.4
7.5
13.5
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current
ID(ON)
1.0
0.5
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
80
mS
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
22
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
11
25
pF
Reverse Transfer Capacitance
Crss
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
7.0
20
ns
VDD = 30V, ID = 0.2A,
RL = 150
,VGEN = 10V,
RGEN = 25
Turn-Off Delay Time
tD(OFF)
11
20
ns
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
≤ 300s, duty cycle ≤ 2%.
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相关代理商/技术参数 |
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