参数资料
型号: 2N6896
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: JFETs
英文描述: 6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件页数: 3/6页
文件大小: 77K
代理商: 2N6896
2001 Fairchild Semiconductor Corporation
2N6896 Rev. A
Typical Performance Curves Unless Otherwise Specied
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. FORWARD BIAS OPERATING AREAS
FIGURE 3. TRANSFER CHARACTERISTICS
FIGURE 4. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
FIGURE 5. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 6. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
TC, CASE TEMPERATURE (
oC)
PO
WER
DISSIP
A
TION
MUL
TIPLIER
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
100
10
1
0.01
1
10
100
1000
I D
,DRAIN
CURRENT
(A)
OPERATION IN THIS AREA
LIMITED BY rDS(ON)
VDS, DRAIN TO SOURCE (V)
100
s
1.0ms
10ms
100ms
DC
VDSS (MAX) = 100V
TC = 25
oC
10
s
TJ = MAX RATED
I d(ON)
,
ON-ST
A
TE
DRAIN
CURRENT
(A)
6
4
0
-2
-4
-10
VGS, GATE TO SOURCE VOLTAGE (V)
8
16
-6
10
12
VDS = -10V
PULSE DURATION = 80
s
DUTY CYCLE
≤ 2%
PULSE TEST
125oC
25oC
-40oC
2
14
-8
r DS
(ON)
,
DRAIN
T
O
SOURCE
ON
ID, DRAIN CURRENT (A)
0.8
0.2
0.1
0
2
6
101418
RESIST
ANCE
(
)
-40oC
25oC
125oC
0.3
20
4
8
12
16
VGS = -10V
PULSE TEST
PULSE DURATION = 80
s
DUTY CYCLE
≤ 2%
0.4
0.5
0.6
0.7
3
2
1
-50
0
50
100
TJ, JUNCTION TEMPERATURE (
oC)
NORMALIZED
ON
RESIST
ANCE
0
150
VGS = 10V
ID = 3.8A
1.0
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (
oC)
NORMALIZED
GA
TE
THRESHOLD
V
O
L
T
A
GE
(V)
0.5
VDS = VGS
ID = 0.25mA
1.5
2N6896
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相关代理商/技术参数
参数描述
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