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| 型号： | 2N697.MOD |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 79K |
| 代理商： | 2N697.MOD |
SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N697
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8389
Issue 1
Page 2 of 2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Units
V(BR)CER
(1)
Collector-Emitter Breakdown
Voltage
IC = 10mA
RBE = 10
40
V(BR)CBO
Collector-Base Breakdown
Voltage
IC = 100A
IE = 0
60
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100A
IC = 0
5.0
V
ICBO
Collector Cut-Off Current
VCB = 30V
IE = 0
1.0
TA = 150°C
100
A
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 150mA
IB = 15mA
1.5
VBE(sat)
(1)
Base-Emitter Saturation Voltage
IC = 150mA
IB = 15mA
1.3
V
hFE
(1)
Forward-current transfer ratio
IC = 150mA
VCE = 10V
40
120
DYNAMIC CHARACTERISTICS
IC = 50mA
VCE = 10V
| hfe |
Small signal forward-current
transfer ratio
f = 20MHz
2.5
VCB = 10V
IE = 0
Cobo
Output Capacitance
f = 1.0MHz
35
pF
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
MECHANICAL DATA
Dimensions in mm (inches)
TO39 (TO-205AD)
Underside View
Pin 1
Pin 2
Pin 3
Emitter
Base
Collector
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
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