- 您现在的位置：买卖IC网 > PDF目录49882 > 2N6989J (SEMICOA CORP) 0.8 A, 50 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2N6989J |
| 厂商： | SEMICOA CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.8 A, 50 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封装： | HERMETIC SEALED, CERAMIC, DIP-14 |
| 文件页数： | 1/2页 |
| 文件大小： | 420K |
| 代理商： | 2N6989J |
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N6989
Silicon NPN Transistor
Data Sheet
Description
Complement to the 2N6987
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N6987J)
JANTX level (2N6987JX)
JANTXV level (2N6987JV)
JANS level (2N6987JS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
General purpose switching
4 Transistor Array
NPN silicon transistor
Features
Hermetically sealed Cerdip ceramic
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/559
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
50
Volts
Collector-Base Voltage
VCBO
75
Volts
Emitter-Base Voltage
VEBO
6
Volts
Collector Current, Continuous
IC
800
mA
Power Dissipation, TA = 25
OC
Derate linearly above 25OC
PT
2
11.43
W
mW/
°C
Operating Junction Temperature
TJ
-65 to +200
°C
Storage Temperature
TSTG
-65 to +200
°C
Semicoa Corporation
Copyright
2010
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6989JV | 0.8 A, 50 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 2N7000/D27Z | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2N7000/E6 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
| 2N7000L-18 | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
| 2N7000LTR | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6989JAN | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR |
| 2N6989JANS | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR |
| 2N6989JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N6989JANTXV | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 0.8A 14-Pin SBCDIP |
| 2N6989U | 功能描述:两极晶体管 - BJT Quad PNP Transistor 20 Pin RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。