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参数资料
| 型号： | 2N6989J |
| 厂商： | SEMICOA CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.8 A, 50 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封装： | HERMETIC SEALED, CERAMIC, DIP-14 |
| 文件页数： | 2/2页 |
| 文件大小： | 420K |
| 代理商： | 2N6989J |
www.SEMICOA.com
2N6989
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
50
Volts
Collector-Base Cutoff Current
ICBO1
ICBO2
VCB = 75 Volts
VCB = 60 Volts
10
A
nA
Collector-Base Cutoff Current
ICBO3
VCB = 60 Volts, TA = 150°C
10
A
Emitter-Base Cutoff Current
IEBO1
IEBO2
VEB = 6 Volts
VEB = 4 Volts
10
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
s, Duty Cycle ≤ 2.0%
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
TA = -55°C
50
75
100
30
35
325
300
Base-Emitter Saturation Voltage
VBEsat1
VBEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.6
1.2
2.0
Volts
Collector-Emitter Saturation Voltage
VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.3
1.0
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 20 Volts, IC = 20 mA,
f = 100 MHz
2.5
10
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
50
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
8
pF
Open Circuit Input Capacitance
CIBO
VEB = 2 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
25
pF
Transistor to Transistor Resistance
|RT-T|
|VT-T| = 500 Volts
1010
Switching Characteristics
Saturated Turn-On Time
tON
35
ns
Saturated Turn-Off Time
tOFF
300
ns
Rev. D
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
Semicoa Corporation.
Copyright
2010
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6989JAN | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR |
| 2N6989JANS | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR |
| 2N6989JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N6989JANTXV | 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 50V 0.8A 14-Pin SBCDIP |
| 2N6989U | 功能描述:两极晶体管 - BJT Quad PNP Transistor 20 Pin RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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