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参数资料
| 型号： | 2N7000BU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 200MA TO-92 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET TO-92 Pkg |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 30pF @ 25V |
| 功率 - 最大： | 400mW |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3 标准主体 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 散装 |
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx?
Bottomless?
CoolFET?
CROSSVOLT ?
DOME?
E 2 CMOS TM
EnSigna TM
FACT?
FACT Quiet Series?
FAST ?
FASTr?
GlobalOptoisolator?
GTO?
HiSeC?
ISOPLANAR?
MICROWIRE?
OPTOLOGIC?
OPTOPLANAR?
PACMAN?
POP?
PowerTrench ?
QFET?
QS?
QT Optoelectronics?
Quiet Series?
SILENT SWITCHER ?
SMART START?
SuperSOT?-3
SuperSOT?-6
SuperSOT?-8
SyncFET?
TinyLogic?
UHC?
VCX?
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative or
In Design
First Production
Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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| 2N7000BU_T | |
| 2N7000CSM | 制造商:TT Electronics/ Semelab 功能描述:MOSFETHI-RELN CH60V0.2ALCC1 制造商:TT Electronics/ Semelab 功能描述:MOSFET,HI-REL,N CH,60V,0.2A,LCC1 |
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| 2N7000-D26Z | 功能描述:MOSFET N-CH 60V 200MA TO-92 制造商:on semiconductor 系列:- 包装:剪切带（CT） 零件状态:在售 FET 类型:N 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:200mA（Ta） 驱动电压（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 时的 Vgs（th）（最大值）:3V @ 1mA Vgs（最大值）:±20V 不同 Vds 时的输入电容（Ciss）（最大值）:50pF @ 25V FET 功能:- 功率耗散（最大值）:400mW（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:5 欧姆 @ 500mA，10V 工作温度:-55°C ~ 150°C（TJ） 安装类型:通孔 供应商器件封装:TO-92-3 封装/外壳:TO-226-3，TO-92-3（TO-226AA）（成形引线） 基本零件编号:2N7000 标准包装:1 |
| 2N7000-D74Z | 功能描述:MOSFET N-CH 60V 200MA TO-92 制造商:on semiconductor 系列:- 包装:剪切带（CT） 零件状态:在售 FET 类型:N 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:200mA（Ta） 驱动电压（最大 Rds On，最小 Rds On）:4.5V，10V 不同 Id 时的 Vgs（th）（最大值）:3V @ 1mA Vgs（最大值）:±20V 不同 Vds 时的输入电容（Ciss）（最大值）:50pF @ 25V FET 功能:- 功率耗散（最大值）:400mW（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:5 欧姆 @ 500mA，10V 工作温度:-55°C ~ 150°C（TJ） 安装类型:通孔 供应商器件封装:TO-92-3 封装/外壳:TO-226-3，TO-92-3（TO-226AA）（成形引线） 基本零件编号:2N7000 标准包装:1 |
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