参数资料
型号: 2N7002/T3
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封装: PLASTIC PACKAGE-3
文件页数: 13/13页
文件大小: 153K
代理商: 2N7002/T3
2N7002
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
9 of 13
NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
9.
Soldering
Fig 14. Reflow soldering footprint for SOT23 (TO-236AB)
Fig 15. Wave soldering footprint for SOT23 (TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3
×)
0.6
(3
×)
0.6
(3
×)
0.7
(3
×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2
×)
1.2
(2
×)
2.2
2.6
Dimensions in mm
相关PDF资料
PDF描述
2N7002-T 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002TRL13 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7221 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N7236R1 18 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
2N7221R1 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
相关代理商/技术参数
参数描述
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2N7002T-7-F 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002TA 功能描述:MOSFET N Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002-TA 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 0.115A 3PIN TO-236 - Tape and Reel
2N7002TC 功能描述:MOSFET N Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube