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参数资料
| 型号： | 2N7002/T3 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 7/13页 |
| 文件大小： | 153K |
| 代理商： | 2N7002/T3 |
2N7002
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
3 of 13
NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
Fig 1.
Normalized continuous drain current as a
function of solder point temperature
Fig 2.
Normalized total power dissipation as a
function of solder point temperature
Fig 3.
Safe operating area; continous and peak drain currents as a function of drain-source voltage
Tsp (°C)
0
200
150
50
100
03aa25
40
80
120
Ider
(%)
0
Tsp (°C)
0
200
150
50
100
03aa17
40
80
120
Pder
(%)
0
003aab350
10
-2
10
-1
1
10
1
10
2
VDS (V)
ID
(A)
DC
1 ms
100 s
Limit RDSon = VDS / ID
10 ms
100 ms
10 s
tp =
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| 2N7002-T | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002T-7 | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002T-7-F | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002TA | 功能描述:MOSFET N Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002-TA | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 0.115A 3PIN TO-236 - Tape and Reel |
| 2N7002TC | 功能描述:MOSFET N Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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