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参数资料
| 型号： | 2N7002CSM-JQR-B |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, LCC1-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 174K |
| 代理商： | 2N7002CSM-JQR-B |
N-CHANNEL ENHANCEMENT
MODE MOSFET
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Telephone +44 (0) 1455 556565
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Document Number 8550
Issue 1
Page 1 of 3
2N7002CSM
VDSS = 60V , ID = 115mA, RDS(ON) = 7.5
Fast Switching
Low Threshold Voltage
Integral Source-Drain Body Diode
Hermetic Ceramic Surface Mount Package (SOT-23 compatible)
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
60V
VGS
Gate – Source Voltage
±40V
ID
Continuous Drain Current
TC = 25°C
115mA
ID
Continuous Drain Current
TC = 100°C
75mA
IDM
Pulsed Drain Current
(1)
800mA
PT
Total Power Dissipation at
TA ≤ 25°C
350mW
De-rate TC > 25°C
2.8mW/°C
TJ
Operating Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
Max
Units
RθJA
Thermal Resistance, Junction To Ambient
357
°C/W
Notes
(1)
Repetitive Rating: Pulse width limited by maximum junction temperature
(2)
Pulse Width ≤ 300us, δ ≤ 2%
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PDF描述 |
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| 2N7002CSM-QR-B | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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| 2N7002DCSM-JQR | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002DWT/R7 | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002E-E3 | 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002-D87Z | 功能描述:MOSFET N-CH 60V 0.115A SOT23 制造商:on semiconductor 系列:- 包装:剪切带（CT） 零件状态:Digi-Key 停止供應 FET 类型:N 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:115mA（Ta） 驱动电压（最大 Rds On，最小 Rds On）:5V，10V 不同 Id 时的 Vgs（th）（最大值）:2.5V @ 250μA Vgs（最大值）:±20V 不同 Vds 时的输入电容（Ciss）（最大值）:50pF @ 25V FET 功能:- 功率耗散（最大值）:200mW（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:7.5 欧姆 @ 500mA，10V 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 供应商器件封装:SOT-23（TO-236AB） 封装/外壳:TO-236-3，SC-59，SOT-23-3 基本零件编号:2N7002 标准包装:1 |
| 2N7002DCSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
| 2N7002DSPT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:Dual N-Channel Enhancement MOS FET |
| 2N7002DW | 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002DW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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