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参数资料
| 型号： | 2N7002DWT/R7 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 1/5页 |
| 文件大小： | 171K |
| 代理商： | 2N7002DWT/R7 |
PAGE . 1
REV.0.0-AUG.4.2008
2N7002DW
FEATURES
R
DS(ON), VGS@10V,IDS@500mA=5
R
DS(ON), VGS@4.5V,IDS@75mA=7.5
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: SOT-363 Package
Terminals : Solderable per MIL-STD-750,Method 2026
Marking : 702
60V N-Channel Enhancement Mode MOSFET
Maximum RATINGS and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002E | 功能描述:MOSFET 60V 240mA 0.5W 3.0ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002E,215 | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002E_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002E_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23 |
| 2N7002E215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 385MA 3-SOT-23 |
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