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参数资料
| 型号： | 2N7002DWT/R7 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 4/5页 |
| 文件大小： | 171K |
| 代理商： | 2N7002DWT/R7 |
PAGE . 4
REV.0.0-AUG.4.2008
2N7002DW
Fig.6 - Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.7 - Gate Charge
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.10 - Source-Drain Diode Forward Voltage
Qgd
Qgs
Qg
Qsw
Vgs(th)
Vgs
Qg
Qg(th)
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
VSD - Source-to-Drain Voltage (V)
IS
-
S
our
c
e
C
u
rr
e
nt
(A
)
V =0V
GS
T =125 C
J
O
T =25 C
J
O
T =-55 C
J
O
0.6
0.7
0.8
0.9
1
1.1
1.2
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (
oC)
V
th
-
G
-S
Thre
s
hold
V
olt
a
ge
(N
O
R
MALIZE
D)
I =250uA
D
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
Qg - GateCharge(nC)
V
GS
-
G
at
e-
to
-S
o
u
rce
V
o
lt
ag
e
(V
)
V =15V
I =500mA
DS
D
64
65
66
67
68
69
70
71
72
73
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (
oC)
BV
DS
S
-
B
re
a
k
dow
n
V
ol
ta
ge
(V
)
I =250uA
D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002E | 功能描述:MOSFET 60V 240mA 0.5W 3.0ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002E,215 | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002E_10 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002E_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23 |
| 2N7002E215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 385MA 3-SOT-23 |
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