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参数资料
| 型号： | 2N7002DCSM-JQR-A |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CERAMIC, LCC2, 6 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 17K |
| 代理商： | 2N7002DCSM-JQR-A |
V(BR)DSS Gate – Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IGSS
Gate – Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
ID(on)*
On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
gFS*
Forward Transconductance
gOS*
Common Source Output Conductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
tON
Turn–On Time
tOFF
Turn–Off Time
2N7002DCSM
ELECTRICAL CHARACTERISTICS (T
CASE = 25°C unless otherwise stated)
VGS = 0V
ID = 10A
VDS = VGS
ID = 0.25mA
VGS = ±20VVDS = 0V
VDS = 60V
VGS = 0V
TCASE = 125°C
VDS≥2VDS(ON) VGS = 10V
VGS = 5V
ID = 50mA
TCASE = 125°C
VGS = 10V
ID = 0.5A
TCASE = 125°C
VGS = 5V
ID = 50mA
VGS = 10V
ID = 0.5A
TCASE = 125°C
VDS = 10V
ID = 0.2A
VDS = 5V
ID = 50mA
VDS = 25V
VGS = 0V
f = 1MHz
VDD = 30V
VGEN = 10V
RL = 150
RG = 25
ID = 0.2A
60
70
1
2.15
2.5
±100
1
500
1000
57.5
9
13.5
2.5
7.5
4.4
13.5
0.25
0.375
1.25
3.75
2.2
6.75
80
170
500
16
50
11
25
720
V
nA
A
mA
V
ms
s
pF
ns
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: PW = 80
s , δ≤ 1%
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 6171
Issue 1
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| 2N7002DW H6327 | 功能描述:MOSFET 2N-CH 60V 0.3A SOT363 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:OptiMOS™ 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| 2N7002DW L6327 | 功能描述:MOSFET N-KANAL SML SIG MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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