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参数资料
| 型号： | 2N7002LT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 115MA SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 Product Obsolescence 07/Jul/2010 |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 剪切带 (CT) |
| 其它名称： | 2N7002LT1OSCT |
2N7002L, 2V7002L
Small Signal MOSFET
60 V, 115 mA, N ? Channel SOT ? 23
Features
? 2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC ? Q101 Qualified and
http://onsemi.com
PPAP Capable (2V7002L)
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
V (BR)DSS
60 V
R DS(on) MAX
7.5 W @ 10 V,
500 mA
I D MAX
115 mA
Rating
Drain ? Source Voltage
Drain ? Gate Voltage (R GS = 1.0 M W )
Drain Current
? Continuous T C = 25 ° C (Note 1)
? Continuous T C = 100 ° C (Note 1)
? Pulsed (Note 2)
Symbol
V DSS
V DGR
I D
I D
I DM
Value
60
60
± 115
± 75
± 800
Unit
Vdc
Vdc
mAdc
1
N ? Channel
3
Gate ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 50 m s)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR ? 5 Board
(Note 3) T A = 25 ° C
Derate above 25 ° C
Thermal Resistance, Junction ? to ? Ambient
V GS
V GSM
Symbol
P D
R q JA
± 20
± 40
Max
225
1.8
556
Vdc
Vpk
Unit
mW
mW/ ° C
° C/W
1
3
2
SOT ? 23
CASE 318
2
1
MARKING
DIAGRAM
702 M G
G
(Note 4) Alumina Substrate, T A = 25 ° C
Derate above 25 ° C
Thermal Resistance, Junction ? to ? Ambient
2N7002LT3G
10,000 Tape & Reel
Total Device Dissipation P D
300 mW
2.4 mW/ ° C
R q JA 417 ° C/W
Junction and Storage Temperature T J , T stg ? 55 to ° C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
3. FR ? 5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
STYLE 21
702 = Device Code
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping ?
2N7002LT1G SOT ? 23 3000 Tape & Reel
(Pb ? Free)
2V7002LT1G
3000 Tape & Reel
2V7002LT3G
2N7002LT1H*
SOT ? 23
(Pb ? Free)
10,000 Tape & Reel
3000 Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Not for new design.
? Semiconductor Components Industries, LLC, 2013
April, 2013 ? Rev. 7
1
Publication Order Number:
2N7002L/D
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7002T-7 | MOSFET N-CH 60V 115MA SOT-523 |
| 2N7002TC | MOSFET N-CHAN 60V SOT23-3 |
| 2N7002T | MOSFET N-CH 60V 115MA SOT-523F |
| 2N7002VA | MOSF N CH DL 60V 280MA SOT 563F |
| 2N7002VC-7 | MOSFET N-CH DUAL 60V SOT-563 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002LT1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Small Signal MOSFET 115 mA， 60 Volts |
| 2N7002LT1G | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002LT1G | 制造商:ON Semiconductor 功能描述:MOSFET Transistor Transistor Polarity:Si |
| 2N7002LT1H | 制造商:ON Semiconductor 功能描述:SMALL SIGNAL MOSFET 60 V |
| 2N7002LT3 | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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