- 您现在的位置：买卖IC网 > PDF目录33300 > 2N7620M2 800 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | 2N7620M2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HERMETIC SEALED, FLAT PACK-14 |
| 文件页数： | 1/9页 |
| 文件大小： | 223K |
| 代理商： | 2N7620M2 |
Absolute Maximum Ratings (Per Die)
Parameter
Units
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
0.8
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
0.5
IDM
Pulsed Drain Current
3.2
PD @ TC = 25°C
Max. Power Dissipation
0.6
W
Linear Derating Factor
0.005
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
16
mJ
IAR
Avalanche Current
0.8
A
EAR
Repetitive Avalanche Energy
0.06
mJ
dv/dt
Peak Diode Recovery dv/dt
10.2
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.63 in./1.6 mm from case for 10s)
Weight
0.52 (Typical)
g
°
C
A
03/17/08
www.irf.com
1
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLA770Z4
100K Rads (Si)
0.60
0.8A
IRHLA730Z4
300K Rads (Si)
0.60
0.8A
For footnotes refer to the last page
Pre-Irradiation
RADIATION HARDENED
IRHLA770Z4
LOGIC LEVEL POWER MOSFET
60V, Quad N-CHANNEL
THRU-HOLE (14-LEAD FLAT PACK)
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n Light Weight
n
Complimentary P-Channel Available -
IRHLA7970Z4
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
TECHNOLOGY
2N7620M2
14-Lead Flat Pack
PD-97305
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7624U3 | 22 A, 60 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2N779A | 100 mA, 15 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N834 | NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N851 | 200 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-50 |
| 2N869A | 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7622U2 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) |
| 2N7632UC | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET |
| 2N7635-GA | 功能描述:两极晶体管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N7636-GA | 功能描述:两极晶体管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N7637-GA | 功能描述:两极晶体管 - BJT SiC High Temp SJT 650V 7A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。