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参数资料
| 型号： | 2N7624U3 |
| 元件分类： | JFETs |
| 英文描述： | 22 A, 60 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 203K |
| 代理商： | 2N7624U3 |
Absolute Maximum Ratings
Parameter
Units
ID @VGS = -4.5V,TC = 25°C Continuous Drain Current
-22*
ID @VGS = -4.5V,TC = 100°C Continuous Drain Current
-14.9
IDM
Pulsed Drain Current
-88
PD @ TC = 25°C
Max. Power Dissipation
57
W
Linear Derating Factor
0.45
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
79
mJ
IAR
Avalanche Current
-22
A
EAR
Repetitive Avalanche Energy
5.7
mJ
dv/dt
Peak Diode Recovery dv/dt
-12.3
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
1.0 (Typical)
g
Pre-Irradiation
°C
A
RADIATION HARDENED
IRHLNJ797034
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.5)
10/05/10
www.irf.com
1
60V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number
Radiation Level
RDS(on)
ID
IRHLNJ797034
100K Rads (Si)
0.072
22A*
IRHLNJ793034
300K Rads (Si)
0.072
22A*
For footnotes refer to the last page
SMD-0.5
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n Surface Mount
n Light Weight
International Rectifier’s R7
TM Logic Level Power
MOSFETs provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the
full operating temperature and post radiation. This is
achieved while maintaining single event gate rupture
and single event burnout immunity.
These devices are used in applications such as current
boost low signal source in PWM, voltage comparator
and operational amplifiers.
* Current is limited by package
2N7624U3
PD-97302A
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相关代理商/技术参数 |
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| 2N7632UC | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET |
| 2N7635-GA | 功能描述:两极晶体管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N7636-GA | 功能描述:两极晶体管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N7637-GA | 功能描述:两极晶体管 - BJT SiC High Temp SJT 650V 7A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N7638 | 制造商:Motorola 功能描述:2N7638 TO92 MOT N9H1C |
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