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参数资料
| 型号： | 2N7624U3 |
| 元件分类： | JFETs |
| 英文描述： | 22 A, 60 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 203K |
| 代理商： | 2N7624U3 |
www.irf.com
3
Pre-Irradiation
IRHLNJ797034, 2N7624U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Upto 300K Rads (Si)1
Units
Test Conditions
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
-60
—
V
VGS = 0V, ID = -250A
VGS(th)
Gate Threshold Voltage
-1.0
-2.0
VGS = VDS, ID = -250A
IGSS
Gate-to-Source Leakage Forward
—
-100
nA
VGS = -10V
IGSS
Gate-to-Source Leakage Reverse
—
100
VGS = 10V
IDSS
Zero Gate Voltage Drain Current
—
-1.0
A
VDS= -48V, VGS= 0V
RDS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
—
0.076
VGS = -4.5V, ID = -14.9A
RDS(on)
Static Drain-to-Source On-state
VSD
Diode Forward Voltage
—
-5.0
V
VGS = 0V, ID = -22A
Resistance (SMD-0.5)
—
0.072
VGS = -4.5V, ID = -14.9A
1. Part numbers IRHLNJ797034, IRHLNJ793034
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
RangeVDS (V)
(MeV/(mg/cm
2))
(MeV)
(m)
@VGS=
0V
2V
4V
5V
6V
7V
38 ± 5%
300 ± 7.5%
38 ± 7.5%
-60
-40
62 ± 5%
355 ± 7.5%
33 ± 7.5%
-60
-
85 ± 5%
380 ± 7.5%
29 ± 7.5%
-60
-
-70
-60
-50
-40
-30
-20
-10
0
0123
4
567
Bias VGS (V)
Bi
as
V
D
S
(
V
)
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
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相关代理商/技术参数 |
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|---|---|
| 2N7632UC | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET |
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| 2N7637-GA | 功能描述:两极晶体管 - BJT SiC High Temp SJT 650V 7A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N7638 | 制造商:Motorola 功能描述:2N7638 TO92 MOT N9H1C |
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