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参数资料
| 型号： | 2N7624U3 |
| 元件分类： | JFETs |
| 英文描述： | 22 A, 60 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 203K |
| 代理商： | 2N7624U3 |
IRHLNJ797034, 2N7624U3
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
-22*
ISM
Pulse Source Current (Body Diode)
—
-88
VSD
Diode Forward Voltage
—
-5.0
V
Tj = 25°C, IS = -22A, VGS = 0V
trr
Reverse Recovery Time
—
110
ns
Tj = 25°C, IF = -22A, di/dt ≤ -100A/s
QRR Reverse Recovery Charge
—
132
nC
VDD ≤ -25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-60
—
V
VGS = 0V, ID = -250A
BVDSS/TJ Temperature Coefficient of Breakdown —
-0.055
—
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.072
VGS = -4.5V, ID = -14.9A
Resistance
VGS(th)
Gate Threshold Voltage
-1.0
—
-2.0
V
VDS = VGS, ID = -250A
VGS(th)/TJ Gate Threshold Voltage Coefficient
—
3.5
—
mV/°C
gfs
Forward Transconductance
16
—
S
VDS = -10V, IDS = -14.9A
IDSS
Zero Gate Voltage Drain Current
—
-1.0
VDS = -48V ,VGS = 0V
—
-10
VDS = -48V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
-100
VGS = -10V
IGSS
Gate-to-Source Leakage Reverse
—
100
VGS = 10V
Qg
Total Gate Charge
—
36
VGS = -4.5V, ID = -22A
Qgs
Gate-to-Source Charge
—
10
nC
VDS = -30V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
18
td(on)
Turn-On Delay Time
—
32
VDD = -30V, ID = -22A,
tr
Rise Time
—
250
VGS = -5.0V, RG = 7.5
td(off)
Turn-Off Delay Time
—
100
tf
Fall Time
—
85
LS + LD
Total Inductance
—
4.0
—
Ciss
Input Capacitance
—
2261
—
VGS = 0V, VDS = -25V
Coss
Output Capacitance
—
583
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
91
—
nA
nH
ns
A
Measured from the center of
drain pad to center of source pad
* Current is limited by package
Rg
Gate Resistance
f = 1.0MHz, open drain
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
—
2.2
°C/W
20
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