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参数资料
| 型号： | 2N7620M2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 60 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HERMETIC SEALED, FLAT PACK-14 |
| 文件页数： | 2/9页 |
| 文件大小： | 223K |
| 代理商： | 2N7620M2 |
IRHLA770Z4, 2N7620M2
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
0.8
ISM
Pulse Source Current (Body Diode)
—
3.2
VSD Diode Forward Voltage
—
1.2
V
Tj = 25°C, IS = 0.8A, VGS = 0V
trr
Reverse Recovery Time
—
55
ns
Tj = 25°C, IF = 0.8A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
—
63
nC
VDD ≤ 25V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available International Rectifier Website.
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
RthJA
Junction-to-Ambient
—
210
Typical socket mount
°C/W
Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60
—
V
VGS = 0V, ID = 250A
BVDSS/TJ Temperature Coefficient of Breakdown —
0.067
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.60
VGS = 4.5V, ID = 0.5A
Resistance
VGS(th)
Gate Threshold Voltage
1.0
—
2.0
V
VDS = VGS, ID = 250A
VGS(th)/TJ Gate Threshold Voltage Coefficient
—
-4.7
—
mV/°C
gfs
Forward Transconductance
0.23
—
S
VDS = 10V, IDS = 0.5A
IDSS
Zero Gate Voltage Drain Current
—
1.0
VDS= 48V ,VGS= 0V
——
10
VDS = 48V,
VGS = 0V, TJ =125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 10V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -10V
Qg
Total Gate Charge
—
2.8
VGS = 4.5V, ID = 0.8A
Qgs
Gate-to-Source Charge
—
0.6
nC
VDS = 30V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
1.6
td(on)
Turn-On Delay Time
—
6.5
VDD = 30V, ID = 0.8A,
tr
Rise Time
—
2.5
VGS = 5.0V, RG = 24
td(off)
Turn-Off Delay Time
—
35
tf
Fall Time
—
13
LS + LD
Total Inductance
—
20
—
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
Ciss
Input Capacitance
—
141
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
38
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
1.4
—
nA
nH
ns
A
Rg
Gate Resistance
—
8.0
—
f = 1.0MHz, open drain
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