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参数资料
| 型号： | 2PD601ASL/DG |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 56K |
| 代理商： | 2PD601ASL/DG |
2PD601AXL_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 6 November 2008
3 of 9
NXP Semiconductors
2PD601ARL; 2PD601ASL
50 V, 100 mA NPN general-purpose transistors
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7.
Characteristics
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
60
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
100
mA
ICM
peak collector current
single pulse;
tp ≤ 1ms
-
200
mA
IBM
peak base current
single pulse;
tp ≤ 1ms
-
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
250
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
55
+150
°C
Tstg
storage temperature
65
+150
°C
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
[1] -
-
500
K/W
Table 8.
Characteristics
Tamb =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off current VCB =60V; IE = 0 A
--10
nA
VCB =60V; IE =0A;
Tj = 150 °C
--5
A
IEBO
emitter-base cut-off current
VEB =5V; IC = 0 A
--10
nA
hFE
DC current gain
VCE =2V;
IC = 100 mA
[1] 90
-
hFE group R
VCE =10V;
IC =2mA
210
-
340
hFE group S
VCE =10V;
IC =2mA
290
-
460
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2PD601ASW | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN general purpose transistor |
| 2PD601ASW T/R | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2PD601ASW,115 | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2PD601ASW115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| 2PD601AW | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:NPN Silicon Epitaxial Planar Transistor |
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