参数资料
型号: 2PG303
厂商: PANASONIC CORP
元件分类: IGBT 晶体管
英文描述: 5 A, 400 V, N-CHANNEL IGBT
封装: U TYPE PACKAGE-3
文件页数: 1/3页
文件大小: 166K
代理商: 2PG303
1
IGBTs
unit: mm
2PG303
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: V
CES = 400V
q Allowing to control large current: I
C(peak) = 150A
q Housed in the surface mounting package
s Applications
q For flash-light for use in a camera
1: Emitter
2: Collector
3: Gate
U Type Package
s Absolute Maximum Ratings (T
C = 25°C)
Parameter
Collector to emitter voltage
Gate to emitter voltage
Collector current
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
VCES
VGES
IC
ICP
PC
Tch
Tstg
Ratings
400
±30
5
150
10
1
150
55 to +150
Unit
V
A
W
°C
s Electrical Characteristics (T
C = 25°C)
Parameter
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
ICES
IGES
VCES
VGE(th)
VCE(sat)
Cies
td(on)
tr
td(off)
tf
Conditions
VCE = 320V, VGE = 0
VGE = ±24V, VCE = 0
IC = 1mA, VGE = 0
VCE = 10V, IC = 1mA
VGE = 24V, IC = 5A
VGE = 24V, IC = 150A
VCE = 10V, VGE = 0, f = 1MHz
VCC = 300V, IC = 130A
VGE = 24V, Rg = 25
min
400
3
typ
4.3
1130
100
600
200
850
max
10
±1
7
2
10
Unit
A
V
pF
ns
6.5
±0.1
5.3
±0.1
4.35
±0.1
3.0
±0.1
0.85
±0.1
1
4.6
±0.1
0.75
±0.1
0.5
±0.1
9.8
±
0.1
1.0
±
0.2
7.3
±
0.1
5.5
±
0.1
0.2max.
2.3
±
0.1
2.5
±
0.1
2.3
±
0.1
Marking
2.5
±
0.1
0.05 to 0.15
1.0
±0.1
23
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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