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参数资料
| 型号： | 2SA1297-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-4E1A, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 127K |
| 代理商： | 2SA1297-GR |
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MOS FIELD EFFECT TRANSISTOR
2SK4178
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D19080EJ1V0DS00 (1st edition)
Date Published December 2007 NS
Printed in Japan
2007
DESCRIPTION
The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 9.0 m
Ω MAX. (VGS = 10 V, ID = 30 A)
Low gate to drain charge
QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)
4.5 V drive available
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4178(1)-S27-AY
Note
Tube 75 p/tube
TO-251 (MP-3-b) typ. 0.34 g
2SK4178-ZK-E1-AY
Note
2SK4178-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±48
A
Drain Current (pulse)
Note1
ID(pulse)
±144
A
Total Power Dissipation (TC = 25
°C)
PT1
33
W
Total Power Dissipation (TA = 25
°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
23
A
Single Avalanche Energy
Note2
EAS
52.9
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH
(TO-251)
(TO-252)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1314A | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1314 | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1356Y | 0.8 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 2SA1359-Y | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 2SA1362-GR | 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1297-GR(F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1297-Y(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1298-O(F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1298-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1298-Y,LF | 功能描述:TRANS PNP 25V 0.8A S-MINI 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:800mA 电压 - 集射极击穿（最大值）:25V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:400mV @ 20mA，500mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:160 @ 100mA，1V 功率 - 最大值:200mW 频率 - 跃迁:120MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:S-Mini 标准包装:1 |
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