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参数资料
| 型号： | 2SA1314 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 149K |
| 代理商： | 2SA1314 |
2SA1314
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1314
Strobe Flash Applications
Audio Power Applications
High DC current gain and excellent linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = 4 A)
Low saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Small package
Complementary to 2SC2982
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulsed
(Note 1)
ICP
4
A
Base current
IB
2
A
PC
500
Collector power dissipation
PC
(Note 2)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse test: pulse width = 10 mS (max), duty cycle = 30% (max)
Note 2: Mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Unit: mm
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
相关PDF资料 |
PDF描述 |
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| 2SA1356Y | 0.8 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 2SA1359-Y | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 2SA1362-GR | 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1429-Y | 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1436 | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1314-B(TE12L,CF | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:Trans GP BJT PNP 10V 2A 4-Pin(3+Tab) PW-Mini T/R |
| 2SA1314-B(TE12L,CF) | 制造商:Toshiba 功能描述:Trans GP BJT PNP 10V 2A 4-Pin(3+Tab) PW-Mini T/R |
| 2SA1314-C(TE12L,CF | 制造商:Toshiba 功能描述:PNP |
| 2SA1315 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1315-O(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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