22802TN (KT)/71598HA (KT)/4077TA, TS No.2456-1/3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
High hFE, AF Amplifier Applications
Ordering number:ENN2456
2SA1436
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings at Ta = 25C
Electrical Characteristics at Ta = 25C
Package Dimensions
unit:mm
2003B
[2SA1436]
Applications
AF amplifier, various drivers, muting circuit.
Features
Adoption of MBIT process.
High DC current gain (hFE=500 to 1200).
Large current capacity.
Low collector-to-emitter saturation voltage
(VCE(sat)=0.5V max).
High VEBO (VEBO≥15V).
1 : Emitter
2 : Collector
3 : Base
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